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Raman scattering characterization of titanium silicide formationNEMANICH, R. J; FIORDALICE, R. W; HYEONGTAG JEON et al.IEEE journal of quantum electronics. 1989, Vol 25, Num 5, pp 997-1002, issn 0018-9197, 6 p., 1Article

A low temperature collimated titanium deposition processHEGDE, R. I; FIORDALICE, R. W; KOLAR, D et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 5, pp 1849-1854, issn 0013-4651Article

Orientation control of chemical vapor deposition TiN film for barrier applicationsFIORDALICE, R. W; HEGDE, R. I; KAWASAKI, H et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 6, pp 2059-2063, issn 0013-4651Article

Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallizationCHEN, Y.-P; DIXIT, G. A; LU, J.-P et al.Thin solid films. 1998, Vol 320, Num 1, pp 73-76, issn 0040-6090Conference Paper

Integrated tungsten polycide : analysis of interface compositionADACHI, J. Y; MCINTOSH, B. C; BADT, D. E et al.Thin solid films. 1998, Vol 320, Num 1, pp 128-133, issn 0040-6090Conference Paper

Exploring CMP solutions to planarity challenges with tungsten plugsMENDONCA, J; MURELLA, K; KIM, I et al.Thin solid films. 1998, Vol 320, Num 1, pp 103-109, issn 0040-6090Conference Paper

Improved TiN film as a diffusion barrier between copper and siliconRHA, S.-K; LEE, W.-J; LEE, S.-Y et al.Thin solid films. 1998, Vol 320, Num 1, pp 134-140, issn 0040-6090Conference Paper

The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layersLEE, H. C; VANHAELEMEERSCH, S.Thin solid films. 1998, Vol 320, Num 1, pp 147-150, issn 0040-6090Conference Paper

Growth and properties of W-Si-N diffusion barriers deposited by chemical vapor depositionFLEMING, J. G; ROHERTY-OSMUN, E; SMITH, P. M et al.Thin solid films. 1998, Vol 320, Num 1, pp 10-14, issn 0040-6090Conference Paper

Integrated Al-plug process for 0.45 μm contact/via at 420°CPARIKH, S.Thin solid films. 1998, Vol 320, Num 1, pp 58-62, issn 0040-6090Conference Paper

Integrated CVD-PVD Al plug processing for sub-half micron featuresKONECNI, A; DIXIT, G; RUSSELL, N. M et al.Thin solid films. 1998, Vol 320, Num 1, pp 52-57, issn 0040-6090Conference Paper

Process technology and integration challenges for high performance interconnectsSANDHU, G. S.Thin solid films. 1998, Vol 320, Num 1, pp 1-9, issn 0040-6090Conference Paper

Thermal stability of Al/barrier/TiSix multilayer structuresLU, J. P; HSU, W. Y; HONG, Q. Z et al.Thin solid films. 1998, Vol 320, Num 1, pp 20-25, issn 0040-6090Conference Paper

TiN barrier integrity and volcano formation in W-plug applicationsPARIKH, S; AKSELROD, L; GARDNER, J et al.Thin solid films. 1998, Vol 320, Num 1, pp 26-30, issn 0040-6090Conference Paper

Experimental and numerical analysis of rapid reaction to initiate the radical chain reactions in WSix CVDCHAE, Y. K; EGASHIRA, Y; SHIMOGAKI, Y et al.Thin solid films. 1998, Vol 320, Num 1, pp 151-158, issn 0040-6090Conference Paper

MOCVD of TiN and/or Ti from new precursorsJAEGAB LEE; JIYONG KIM; HYUNKOOK SHIN et al.Thin solid films. 1998, Vol 320, Num 1, pp 15-19, issn 0040-6090Conference Paper

Structural change of TiN/Ti/SiO2 multilayers by N2 annealingHAMAMURA, H; ITOH, H; SHIMOGAKI, Y et al.Thin solid films. 1998, Vol 320, Num 1, pp 31-34, issn 0040-6090Conference Paper

Temperature dependence of the Al-fill processes for submicron-via structuresWEBER, S. J; IGGULDEN, R. C; SCHNABEL, R. F et al.Thin solid films. 1998, Vol 320, Num 1, pp 63-66, issn 0040-6090Conference Paper

The carrier gas and surface passivation effects on selectivity in chemical vapor deposition of copper filmsSEOK KIM; PARK, J.-M; CHOI, D.-J et al.Thin solid films. 1998, Vol 320, Num 1, pp 95-102, issn 0040-6090Conference Paper

Ti/borophosphosilicate glass interfacial reactions and their effects on adhesionKOTTKE, M; TRAVIS, E. O; ROGERS, B. R et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1124-1132, issn 0734-211XArticle

TiNCl formation during low-temperature, low-pressure chemical vapor deposition of TiNHEGDE, R. I; FIORDALICE, R. W; TOBIN, P. J et al.Applied physics letters. 1993, Vol 62, Num 19, pp 2326-2328, issn 0003-6951Article

Manufacturing aspects of low pressure chemical-vapor-deposited TiN barrier layersTRAVIS, E. O; FIORDALICE, R. W.Thin solid films. 1993, Vol 236, Num 1-2, pp 325-329, issn 0040-6090Conference Paper

Nucleation and growth of chemical vapor deposition TiN films on Si (100) as studied by total refection x-ray fluorescence, atomic force microscopy, and Auger electron microscopyHEGDE, R. I; TOBIN, P. J; FIORDALICE, R. W et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 4, pp 1692-1695, issn 0734-2101, 2Conference Paper

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